Fabrication and performance study of 1T-VSe₂@n-Si broadband self-driven Schottky-type photodetector

Due to the metallic nature of VSe2, which causes the high reverse current, studies on photodetector applications are very limited. In this study, a VSe2 film with a thickness of 71.49 nm was coated on n-type Si by the sputtering method to obtain a VSe2@n-Si junction device. Thus, we demonstrate a high-performance broadband Schottky-type photodetector (STPD) based on VSe2@n-Si with a high rectification ratio. XRD, field-emission scanning electron microscopy and energy-dispersive x-ray analysis of the VSe2 film were carried out. The low reverse current and high-performance broadband STPD based on VSe2@n-Si junction is studied in detail. I-V measurements in the presence of 365, 395, 590 and 850 nm irradiation of 8 mW cm(-2) are also carried out. I-V measurements revealed that the VSe2@n-Si STPD has a high photoresponse in the UV-vis range. The VSe2@n-Si STPD demonstrated a broadband detection range with visible light and 590 nm responsivity of up to 10.78 (for 150 mW cm(-2) vis), and similar to 0.22 A W-1 (for 8 mW cm(-2)), respectively. Furthermore, the built-in electric field of the STPD enabled self-driven photodetection with an intrinsic specific detectivity of 4.14 x 10(11) Jones and ON/OFF ratio of 1.1 x 10(5), respectively, at zero bias. Experimental results show that the fabricated VSe2@n-Si STPD is a suitable design for broadband and low-photon energy photodetectors.

Journal

JOURNAL OF PHYSICS D-APPLIED PHYSICS

Year

2025

Volume

58

Issue

24

ISSN

0022-3727

eISSN

1361-6463

DOI

10.1088/1361-6463/addb57

WoS UID

WOS:001499506400001