Highly Air-Stable and Sensitive Self-Powered Broadband Photodetector Based on a PVA-MoS₂ Fibers/n-Si Heterojunction

We designed and demonstrated a self-powered poly(vinyl alcohol) (PVA)-MoS2 fibers/n-Si heterojunction (HJ) device for a high-performance photodetector. Light-intensity-dependent I-V measurements were carried out, ranging from the dark to 150 mW/cm(2) for visible light. Furthermore, electro-optical measurements of HJ under UV (365 and 395 nm), IR (850 nm), and yellow light (590 nm) for constant light power were investigated in detail with the help of I-V characteristics. The PVA-MoS2 /n-Si device showed a pronounced photoresponse at all of these wavelengths. The optimum values of the wavelength-dependent photodetector parameters were obtained under yellow light. In the evaluation of the optical measurements under yellow light, the maximum on/off ratio, R, D, NPDR, and EQE values were 2.91 x 10(5) (zero bias), similar to 480 mA/W (V = -2.0 V), 5.71 x 10(12) Jones (zero bias), 4.64 x 10(9) W1- (zero bias), and 100.8 (V = -2.0 V), respectively. Furthermore, after 25 and 125 days without any encapsulation, the air stability of the device was observed to be excellent in the dark and the light.

Journal

ACS APPLIED ELECTRONIC MATERIALS

Year

2025

Volume

7

Issue

2

Pages

757-765

eISSN

2637-6113

DOI

10.1021/acsaelm.4c01854

WoS UID

WOS:001394793500001