Photoluminescence enhancement of chemical vapor-deposited MoSe₂ monolayers

The transition metal dichalcogenide (TMDC) materials have attracted a great interest owing to their superior features. The chemical vapor deposition (CVD) is very feasible to synthesis of TMDC materials. The thermal expansion coefficient difference between TMDC materials and substrate in the CVD synthesis can cause a strain, resulting in non-radiative recombination and PL decrement for these materials. Therefore, in this work, we studied acetone and isopropanol (IPA) treatment on the photoluminescence (PL) properties of CVD-grown MoSe(2 )monolayers. Firstly, monolayer MoSe2 flakes on SiO2/Si substrates were synthesized via the CVD method by optimizing synthesis parameters. The Raman and PL measurements were taken after acetone and IPA treatments were applied to grown samples. The results indicated an important PL enhancement was seen for acetone treatment. For IPA treatment, there was a PL peak position shifting with decreasing intensity due to its possible structural damage. The acetone, IPA, and transfer processes caused the releasing strain on MoSe2 by breaking the strong interaction between MoSe2 and substrate. For the whole treatment, PL peaks shift to blue with about 80 meV. As a result of the present study, acetone treatment was found as an easy and quick way to enhance radiative emission of CVD-grown MoSe2.

Journal

JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS

Year

2024

Volume

35

Issue

6

ISSN

0957-4522

eISSN

1573-482X

DOI

10.1007/s10854-024-12140-3

WoS UID

WOS:001174410600015

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