Article
2022
·
3 citations
One step sputtered MoS<sub>2</sub> field-effect transistor
Abstract
In this study, variable thickness MoS2 which is one of the most important 2D materials, was grown in a single step radio frequency magnetron sputtering (RFMS) method from a MoS2 target. Successful large area, continuous and homogeneous formation of MoS2 thin film have been shown by Raman mapping measurements. Structural, morphological, elemental composition of MoS2 films grown at different thicknesses was performed using SEM and XPS. Dozens of MoS2-based FET was fabricated with a single lithography step on the same substrate.MoS2 based FETs showed a mobility value of 0.07-0.16 cm(2)/Vs increasing with MoS2 film thickness and a current on/off ratio of about 10(3)-10(4). It has been demonstrated that the FETs show ambipolar characteristics.
Keywords
MoS2
TMDC
thin films
thin film transistor
sputtering
single step growth
VAPOR-PHASE GROWTH
LARGE-AREA
MOLYBDENUM-DISULFIDE
ATOMIC LAYERS
BILAYER MOS2
SCALE
WoS Categories
Physics, Condensed Matter
Citation
- Journal
- MICRO AND NANOSTRUCTURES
- Year
- 2022
- Volume
- 165
- eISSN
- 2773-0123
- DOI
- 10.1016/j.micrna.2022.207203
- WoS UID
- WOS:000881976300006