language Türkçe
Article 2023 · 10 citations

Chemical Synthesis of Organo-siloxene 2D Materials from Calcium Di-Silicide: Characterization, Dielectric and Electrochemical Studies

Nayad, Abdallah, Hasnaoui, Ali, Hadouch, Youness, Fkhar, Lahcen, Idouhli, Rachid, Abdessalam, Abouelfida, Mehdi, Ahmad, Dikici, Burak, Mezzane, Daoud, El Firdoussi, Larbi, Ali, Mustapha Ait

Abstract

Silicon is one of the most used materials in semiconductors and electronic devices. Its miniaturization in two-dimensional (2D) scale is now a great challenge to improve and/or extend its application in many practical fields. Layered siloxene nanosheet (SiNS), a derived 2D silicon material with -H and -OH functional groups synthesized from calcium di-silicide (CaSi2) have attracted a great interest while its functionalization has been barely explored. Herein, the strategy of direct exfoliation of CaSi2 by thermal heating with benzyl groups was explored, leading to air stable functionalized silicon nanosheets. The obtained dispersible thin materials were found to be mostly Kautsky-type crystalline siloxene nanosheets that are arbitrarily terminated with benzyl, hydrogen and hydroxyl groups. Moreover, the dielectric study with temperature dependency showed high dielectric permittivities, without any conducting polymer, induced by different phenomena occurring on the layered nanosheets. Electrochemical studies displayed a diffusion-controlled process involving a fast electron transfer with the functionalized silicon-based materials as working electrodes deposited on carbon graphite electrode (CGE) in the presence of ferricyanide ions. Organo-modified siloxene are therefore potential electrode materials for electrochemical detection.

Keywords
Siloxene Chemical modification 2D materials Dielectric Electrochemical detection ENERGY-STORAGE ELECTRONIC-STRUCTURE SILICENE GRAPHENE GERMANENE ANODE LI EXFOLIATION NANOSHEETS STANENE
WoS Categories
Chemistry, Physical Materials Science, Multidisciplinary
Citation
Journal
SILICON
Year
2023
Volume
15
Issue
1
Pages
321-335
ISSN
1876-990X
eISSN
1876-9918
DOI
10.1007/s12633-022-02012-y
WoS UID
WOS:000827376900001
Open via DOI