Examination of characteristic parameters of Zn/n-Si junction depending on electron radiation applied at different doses

In this work, we have studied the electrical characteristics of Zn/n-Si/Au-Sb Schottky diodes before and after different doses (25, 50 and 75 Gray) of electron-irradiation at room temperature. The ohmic contact has been made on n-Si crystal with Au-Sb alloy. The rectifier contact was sputtered Zinc metal on n-Si by using DC magnetron sputtering. The I-V measurements of these diodes performed by the use of a KEITLEY 487 Picoammeter/Voltage Source and the C-V measurements were performed with HP 4192A (50- 13 MHz) LF Impedance Analyzer at room temperature and in dark. Experimental results showed that the values of the ideality factor obtained from I to V measurements increased and the values of the barrier height obtained from I to V and C-V measurements decreased after electron-irradiation. (c) 2021 Elsevier Ltd. Selection and peer-review under responsibility of the scientific committee of the International Congress on Semiconductor Materials and Devices, ICSMD2018.

Journal

MATERIALS TODAY-PROCEEDINGS

Year

2021

Volume

46

Pages

7001-7004

ISSN

2214-7853

DOI

10.1016/j.matpr.2021.03.279

WoS UID

WOS:000685935700026