Proceedings Paper 2021 · 6 citations

Annealing effect on I-V and C-V characteristics of Al/n-InP Schottky diodes at low temperatures

Catir, Fulya Esra Cimilli, Saglam, Mustafa

Abstract

In this study, Schottky contacts have been fabricated on n-InP (100) using an Al/n-InP/In configuration. The current voltage (I-V) and capacitance voltage (C-V) characteristics of Al/n-InP/In Schottky diodes were calculated from the liquid nitrogen temperature to the room temperature by steps of 10 K before annealing of this structure and after annealing at 400 degrees C for 3 min. The series resistance, ideality factor and barrier height values calculated using I-V characteristics, Cheung functions, Norde (F-V) functions, and C-V characteristics before and after annealing the contact and compared for each temperature. These measurements clearly showed that the Al/n-InP/In Schottky diode became extremely stable due to the annealing process and the mean barrier height value have been increased from 0,494 to 0,674 eV after thermal annealing at 400 degrees C. In addition, temperature dependent barrier height values of as-fab. and annealed (at 400 degrees C) Al/n-InP/InSchottky contacts are consistent with "the barrier inhomogeneous model" of Schottky diodes. (c) 2021 Elsevier Ltd. Selection and peer-review under responsibility of the scientific committee of the International Congress on Semiconductor Materials and Devices, ICSMD2018.

Keywords

Barrier inhomogeneities Thermal annealing Norde (F-V) functions Current-voltage characteristics Capacitance-voltage characteristics CURRENT-VOLTAGE ELECTRICAL CHARACTERIZATION FABRICATION

WoS Categories

Materials Science, Multidisciplinary

Citation

Journal: MATERIALS TODAY-PROCEEDINGS
Year: 2021
Volume: 46
Pages: 6979-6985
ISSN: 2214-7853
DOI: 10.1016/j.matpr.2021.03.275
WoS UID: WOS:000685935700022

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