Proceedings Paper 2021 · 5 citations

The temperature dependence of current-voltage characteristics of CuAuAg/n-Si/Ti Schottky diode

Orhan, Zeynep, Taser, Ahmet, Guzeldir, Betul, Saglam, Mustafa

Abstract

CuAuAg/n-Si/Ti diode has been fabricated and temperature dependences of current voltage (I-V) characteristics have been analyzed based on thermionic emission (TE) theory in the temperature range of 80- 300 K. The electronic parameters such as, ideality factor, barrier height and series resistance were calculated. It is found that the values of the ideality factor increase and barrier height decrease with decreasing temperature. The ideality factor and barrier height values as a function of the sample temperature have been attributed to the presence of the lateral inhomogeneities of the barrier height. (c) 2021 Elsevier Ltd. Selection and peer-review under responsibility of the scientific committee of the International Congress on Semiconductor Materials and Devices, ICSMD2018.

Keywords

Schottky contacts Barrier inhomogeneities CuAuAg alloys Sample temperature Series resistance ELECTRON-TRANSPORT

WoS Categories

Materials Science, Multidisciplinary

Citation

Journal: MATERIALS TODAY-PROCEEDINGS
Year: 2021
Volume: 46
Pages: 6924-6928
ISSN: 2214-7853
DOI: 10.1016/j.matpr.2021.01.560
WoS UID: WOS:000685935700012

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