Proceedings Paper
2021
·
6 citations
Comparative results of 980 nm InGaAs/GaAs and 1550 nm AlGaInAs/InP diode lasers
Abstract
Transient and steady-state characteristics of 1550 nm AlGaInAs/InP and 980 nm InGaAs/GaAs diode lasers were comparatively modelled using rate equations. The variations of the number of electrons (N-t) and the output power (P-out-t) with time were examined in the transient regime for the both lasers. In addition steady-state characteristics, the number of electrons (N-I) and the output power versus current (L-I), was also investigated for different values of cavity length, stripe-width and active layer thickness. We also verified for both of the lasers that L-I simulation results are well agreed with the experimental results. (C) 2021 Elsevier Ltd.
Keywords
Rate equations
Semiconductor laser
Transient and steady characteristics
InGaAs/GaAs and AlGaInAs/InP lasers
WoS Categories
Materials Science, Multidisciplinary
Citation
- Journal
- MATERIALS TODAY-PROCEEDINGS
- Year
- 2021
- Volume
- 46
- Pages
- 7015-7020
- ISSN
- 2214-7853
- DOI
- 10.1016/j.matpr.2021.03.282
- WoS UID
- WOS:000685932800002