Article 2021 · 11 citations

The effect of thermal annealing on Ti/<i>p</i>-Si Schottky diodes

Asil Ugurlu, H., cinar Demir, K., Coskun, C.

Abstract

Ti/p-Si Schottky barrier diodes (SBDs) have been prepared by metal evaporating method. The effect of low annealing temperature on electrical parameters such as series resistance (R-s), ideality factor (n) and barrier height (phi(b)) of Ti/p-Si Schottky diodes was investigated with the help of current-voltage (I-V) and capacitance-voltage (C-V) characteristics. Schottky diodes have been annealed at temperatures from 50 to 200 degrees C for 1 min in N-2 atmosphere. phi(b), R-s and n were determined using Cheung and Norde functions in current-voltage characteristics. The Schottky barrier height of the as-deposited contact is found to be 0.747 eV (I-V), 1.038 eV (C-V), 0.622 eV [H(I)-I] and 0.786 eV [F(V)-V] and ideality factor as 1.3 (I-V) and 3.55 [dV/d(lnI)-I]. It has been seen that the barrier height, ideality factor and series resistance have changed with increasing annealing temperature up to 200 degrees C.

Keywords

CAPACITANCE-VOLTAGE CHARACTERISTICS ELECTRICAL CHARACTERISTICS HYDROSTATIC-PRESSURE I-V STRUCTURAL-PROPERTIES TRANSPORT MECHANISM SERIES RESISTANCE BARRIER DIODES TEMPERATURE PARAMETERS

WoS Categories

Engineering, Electrical & Electronic Materials Science, Multidisciplinary Physics, Applied Physics, Condensed Matter

Citation

Journal: JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
Year: 2021
Volume: 32
Issue: 11
Pages: 15343-15351
ISSN: 0957-4522
eISSN: 1573-482X
DOI: 10.1007/s10854-021-06084-1
WoS UID: WOS:000650515100003

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