Deposition of grid-like single-crystal Ce<sub>2</sub>O<sub>3</sub> thin films on LaAlO<sub>3</sub>(100) substrate by pulsed laser deposition
Oxygen-deficient Ce2O3 growth requires reduction of CeO2 with hydrogen gas and high temperatures. In this study, a 2-year desiccated target with different oxygen-deficient phases was used as a pellet in order to deposit cerium oxide thin films on LaAlO3 substrates from 100 to 800 degrees C by pulsed laser deposition. Desiccated target utilization resulted in pure Ce2O3 and CeO2-Ce2O3 mixture thin films verified by X-ray diffraction. Morphology of the thin films was investigated by scanning electron microscope, and seen that Ce2O3 films have grid-like surface formation. A fresh target is prepared and used in order to compare the crystal structure of the desiccated target. Experiments repeated with a fresh target and X-ray photoelectron spectroscopy of cerium oxide films indicated that Ce2O3 growth depends on target stoichiometry. Further desiccation of the target resulted in single-crystal Ce2O3 growth in all temperatures between 100 and 800 degrees C, attributed to stoichiometric transfer of the target composition.
- Journal
- JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
- Year
- 2021
- Volume
- 32
- Issue
- 3
- Pages
- 3854-3862
- ISSN
- 0957-4522
- eISSN
- 1573-482X
- DOI
- 10.1007/s10854-020-05129-1
- WoS UID
- WOS:000605874600003