The investigation of the corrosion behavior of CZTS thin films prepared via electrodeposition

In this study, Cu2ZnSnS4 (CZTS) thin films were deposited on indium tin oxide (ITO)-coated glass substrate by single-step electrochemical deposition (ECD). CZTS absorber layers were obtained with 1.05 V cathodic potential and 2700 s deposition time for pH:5 and at room temperature. Trisodium citrate was used as a complexing agent for co-electrodeposition. After the deposition, the CZTS thin films were annealed at 580 degrees C in sulfur powder and N-2 atmosphere for 60 min for the formation of stoichiometric kesterite structure. The structural, morphological and optical properties of the prepared thin films were investigated by X-ray diffraction (XRD) analysis, optical absorption techniques, scanning electron microscopy (SEM) observations and Raman spectroscopy measurements. Crystallisation of the films was confirmed by XRD measurements. The prepared films were also examined using Electrochemical Impedance Spectroscopy (EIS) and Tafel measurements. Nyquist, open circuit voltage (OCV) voltage(OCP) and Bode analysis were used to find out the structural changing and corrosion behavior of the CZTS films. The equivalent circuit parameters such as solution resistance (Rs), polarization resistance (Rp), a constant phase element (CPE), a CPE exponent (n) and diffusion potential were calculated as 253.8 Omega cm(2), 944.2 Omega cm(2), 1.547 x 10(-3) Omega(-1) s cm(-2), 0.500 and 8.631 x 10(-3) Omega(-1) s(1/2). cm(-2), respectively. Also, with the help of Tafel measurements, the corrosion potential and current values were determined as -0.161 V and 1 x 10(-6) A, respectively.

Journal

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING

Year

2021

Volume

123

ISSN

1369-8001

eISSN

1873-4081

DOI

10.1016/j.mssp.2020.105553

WoS UID

WOS:000604232600007