Article 2021 · 14 citations

The temperature induced current transport characteristics in the orthoferrite YbFeO<sub>3-<i>δ</i></sub> thin film/p-type Si structure

Polat, O., Coskun, M., Efeoglu, H., Caglar, M., Coskun, F. M., Caglar, Y., Turut, A.

Abstract

The perovskite ytterbium ferrite is a new ferroelectric semiconductor material. We presented the temperature induced current-voltage (I-V) characteristics of the Al/YbFeO3-delta/p-Si/Al hetero-junction. The orthoferrite YbFeO3-delta thin films were deposited on a single crystal p-type Si substrate by a radio frequency magnetron sputtering system. The potential barrier height (BH) and ideality factor n of the heterojunction were obtained by thermionic emission current method based on the recommendations in the literature. The fact that the calculated slopes of I-V curves become temperature independent implying that the field emission current mechanism takes place across the device, which has been explained by the presence of the spatial inhomogeneity of BHs or potential fluctuations. Moreover, a tunneling transmission coefficient value of 26.67 was obtained for the ferroelectric YbFeO3-delta layer at the Al/p-Si interface.

Keywords

perovskite oxide YbFeO3 hetero-junction current-voltage (I-V) characteristics field emission CURRENT-VOLTAGE CHARACTERISTICS SOL-GEL METHOD ELECTRICAL-PROPERTIES BARRIER INHOMOGENEITIES CAPACITANCE-VOLTAGE SCHOTTKY DIODES I-V CONDUCTION MECHANISMS PEROVSKITE OXIDES SERIES RESISTANCE

WoS Categories

Physics, Condensed Matter

Citation

Journal: JOURNAL OF PHYSICS-CONDENSED MATTER
Year: 2021
Volume: 33
Issue: 3
ISSN: 0953-8984
eISSN: 1361-648X
DOI: 10.1088/1361-648X/abba69
WoS UID: WOS:000584924200001

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