Understanding SILAR-Grown SnO₂ thin films: how altered deposition cycle numbers/film thickness influence characterization

In this study, the morphological, structural, chemical and optical assets of SnO2 thin films with varying thicknesses, grown by the Successive Ionic Layer Adsorption and Reaction (SILAR) technique, were systematically investigated. X-ray diffraction (XRD) analysis validated the polycrystalline nature of the films with a tetragonal rutile structure, and the crystallite size was observed to decrease with decreasing film thickness. Energy-dispersive X-ray analysis (EDAX) provided insights into the elemental composition, indicating high purity of SnO2 films. Raman spectroscopy revealed characteristic peaks corresponding to the Sn-O vibrations. Scanning electron microscopy (SEM) images showed a uniform surface morphology with a clear dependence on film thickness, with thinner films exhibiting smaller grain sizes. Optical measurements, including absorbance and transmittance, were used to determine the films' band gap, which exhibited a shift with thickness variation, indicating quantum confinement effects. Photoluminescence (PL) spectra revealed significant defect-related emission peaks, which intensified as the thickness decreased. X-ray photoelectron spectroscopy (XPS) was implemented to analyze the chemical states of the constituent elements, confirming the presence of both Sn-4(+) and O-2(-) in all films. This comprehensive analysis demonstrates how varying film thickness influences the material properties of SnO2 samples, supplying noteworthy insights for their potential utilizations in optoelectronic devices, sensors, and coatings.

Dergi

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING

Yıl

2025

Cilt

131

Sayı

11

ISSN

0947-8396

eISSN

1432-0630

DOI

10.1007/s00339-025-08996-9

WoS UID

WOS:001597074000006