Effect of Substrate Temperature on Structural, Morphological, and Optical Properties of Gallium Oxide Thin Films Deposited by RF-Sputtering

In this paper, gallium oxide (Ga2O3) 2 O 3 ) thin films at various substrate temperatures (Ts) were grown on Indium Tin Oxide (ITO), glass, p-type silicon by radio-frequency magnetron sputtering (RFMS). We investigated how structural, morphological and optical properties change with various Ts. XRD results of thin films grown on p-type silicon substrate suggest that crystallinity properties of synthesized thin films strongly depend on the Ts. From SEM and AFM analyses of Ga2O3 2 O 3 thin films grown on p-type silicon substrate, it was observed that when the temperature increased, a porous structure appeared, and the grain size changed depending on the Ts. Moreover, obtained results from the absorption measurements, the bandgap energy of Ga2O3 2 O 3 thin films grown on the p-type silicon substrate decreased with increasing substrate temperature.

Dergi

GAZI UNIVERSITY JOURNAL OF SCIENCE

Yıl

2024

Cilt

37

Sayı

3

Sayfa

1498-1507

ISSN

2147-1762

DOI

10.35378/gujs.1275066

WoS UID

WOS:001333679700002