Graphene/Al<sub>2</sub>O<sub>3</sub>/Si Schottky diode with integrated waveguide on a silicon-on-insulator wafer
Seven, E., Orhan, E. Oz, Di Bartolomeo, A., Ertugrul, M., Tastekin, N. Avishan
Waveguide-integrated graphene photodiodes are on-chip optoelectronic devices with promising applications in telecommunications. Here, we present the electrical properties of a heterostructure consisting of multilayer graphene (MLGr) over a Si waveguide covered by an ultrathin Al2O3 layer. The waveguide is fabricated by etching a silicon-on insulator (SOI) substrate with 220 nm Si and 1.5 lm buried oxide. The 5 nm-thick Al2O3 film is deposited by atomic layer deposition (ALD), while graphene, synthesized on copper by chemical vapor deposition (CVD), is transferred onto the Al2O3/Si rib by a wet transfer method. The MLGr/ Al2O3 /Si rib forms a Schottky structure with rectifying current-voltage characteristics, which are examined using the thermionic emission theory and Norde's method. A Schottky barrier height UB = 0.79eV, an ideality factor n = 26, and a series resistance R-S = 11.6MX are obtained. The device is promising for operation at the optical fiber communication wavelength of 1550 nm.
- Dergi
- INDIAN JOURNAL OF PHYSICS
- Yıl
- 2024
- Cilt
- 98
- Sayı
- 8
- Sayfa
- 2795-2803
- ISSN
- 0973-1458
- eISSN
- 0974-9845
- DOI
- 10.1007/s12648-023-03062-7
- WoS UID
- WOS:001145773800001