Article 2023 · 1 atıf

A Comparative Study of the Structural and Optical Properties of ZnS Films Deposited by Spray-Pyrolysis Technique

Najim, Abdessamad, Hartiti, Bouchaib, Nkuissi, Herve Joel Tchognia, Labrim, Hicham, Fadili, Salah, Ertugrul, Mehmet, Thevenin, Philippe, Budak, Hasan Feyzi, Kasapoglu, Ahmet Emre

Özet

This study aims at synthesizing zinc sulfide (ZnS) thin films using spray pyrolysis method. The effect of the Zn concentration on the physical properties of ZnS is investigated using X-ray diffraction (XRD), scanning electron microscope (SEM), UV-Vis spectrophotometer, photoluminescence (PL), and Raman spectroscopy. XRD shows a preferential orientation along the (111) direction corresponding to the ZnS cubic structure. Based on the XRD results, it is seen that low zinc concentrations compared to sulfur content can increase the crystalline quality of films. Raman spectra confirm the presence of the ZnS cubic structure observed by XRD and show the presence of sprayed ZnS vibrational modes for all films. PL emission spectrum of ZnS confirms the presence of Zn and S atoms at all molar concentrations. SEM reveals densely packed and uniformly distributed grains with precise shapes. The elemental analysis confirms the growth of stochiometric Zn/S ratio. The optical analysis shows a high transmittance around 88% in the visible range of the solar spectrum with optical band gaps varying from 3.4 to 3.6 eV. These properties are interesting and show that ZnS thin films can be used as buffer layers in thin film solar cells applications.

Anahtar Kelimeler

band gap photoluminescence scanning electron microscopy spray pyrolysis UV-Vis spectrophotometry ZnS thin films RESONANT RAMAN-SCATTERING CHEMICAL BATH DEPOSITION THIN-FILMS DOPED ZNS ELECTRICAL-PROPERTIES BUFFER LAYER TEMPERATURE CU NANOSTRUCTURES SPECTROSCOPY

WoS Kategorileri

Crystallography

Sürdürülebilir Kalkınma Amaçları

Erişilebilir ve Temiz Enerji

Künye

Dergi: CRYSTAL RESEARCH AND TECHNOLOGY
Yıl: 2023
Cilt: 58
Sayı: 7
ISSN: 0232-1300
eISSN: 1521-4079
DOI: 10.1002/crat.202200280
WoS UID: WOS:000986309700001

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