Article 2022 · 2 atıf

γ-Ray Mass Attenuation Coefficients of Some Semiconductor Crystals at Liquid Nitrogen Temperature

Akca, Burcu, Gurbulak, Bekir, Erzeneoglu, Salih Zeki

Özet

In this study, the change according to the liquid nitrogen temperature (- 196 degrees C) of gamma-ray mass attenuation coefficients (mu/rho) for TlGaSe2, TlInGaSe2, Tl0.7In0.3Se2, Ga0.9In0.1Se, GaTe0.4Se0.6, GaTe0.8Se0.2, GaSe, GaSe:Sn, GaTe, and GaTe:Cd semiconductor crystals has been investigated by using an extremely narrow collimated-beam transmission method in the energy 59.54 keV. TlGaSe2, TlInGaSe2, Tl0.7In0.3Se2, Ga0.9In0.1Se, GaTe0.4Se0.6, GaTe0.8Se0.2, GaSe, GaSe:Sn, GaTe, and GaTe:Cd semiconductors were grown by the Bridgman-Stockbarger method in our current crystal growth laboratory. These crystals have been annealing at a temperature of 300 degrees C for 30 min. Then, these semiconductors were kept in liquid nitrogen for 3 min. gamma-ray mass attenuation coefficients of semiconductors were measured first at room temperature (25 degrees C) after annealing at (300 degrees C) and finally discarded into the liquid nitrogen (- 196 degrees C). gamma-rays of 241Am were detected by using a high-resolution Si(Li) detector and energy-dispersive X-ray fluorescence spectrometer (EDXRFS). The data were collected into 4096 channels of a multichannel analyzer and the spectra were collected for 1800s. Also, the experimental results have been compared with WinXCom and FFAST theoretical results for 25 degrees C.

Anahtar Kelimeler

Bridgman/Stockbarger EDXRFS Liquid nitrogen temperature Semiconductor crystals gamma-Ray mass attenuation coefficients WinXCom FFAST UNDOPED LAYERED SEMICONDUCTORS ABSORPTION INSE TLGAS2

WoS Kategorileri

Multidisciplinary Sciences

Künye

Dergi: IRANIAN JOURNAL OF SCIENCE AND TECHNOLOGY TRANSACTION A-SCIENCE
Yıl: 2022
Cilt: 46
Sayı: 6
Sayfa: 1697-1703
ISSN: 1028-6276
eISSN: 2364-1819
DOI: 10.1007/s40995-022-01369-4
WoS UID: WOS:000873980900001

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