In-situ thin film copper-copper thermocompression bonding for quantum cascade lasers
Rouhi, Sina, Ozdemir, Mehtap, Ekmekcioglu, Merve, Yigen, Serap, Demirhan, Yasemin, Szerling, Anna, Kosiel, Kamil, Kozubal, Maciej, Kruszka, Renata, Prokaryn, Piotr, Ertugrul, Mehmet, Reno, John L., Aygun, Gulnur, Ozyuzer, Lutfi
The choice of metals, bonding conditions and interface purity are critical parameters for the performance of metal-metal bonding quality for quantum cascade lasers (QCLs). Here, we present a novel approach for the thermocompression bonding of Cu-Cu thin films on GaAs-based waveguides without having any oxide phase, contamination or impurities at the interface. We designed a hybrid system in which magnetron sputtering of Ta, thermal evaporation of Cu and Cu-Cu thermocompression bonding processes can be performed sequentially under high vacuum conditions. GaAs/Ta/Cu and Cu/Ta/GaAs structures were thermocompressionally bonded in our in-situ homebuilt bonding system by optimizing the deposition parameters and bonding conditions. The grown thin film and the obtained interfaces were characterized using x-ray diffraction (XRD), scanning electron microscopy (SEM) and energy-dispersive x-ray spectroscopy (EDX) techniques. The optimum Ta and Cu films' thicknesses were found to be about 20 nm and 500 nm, respectively. EDX analysis showed that the Ta thin film interlayer diffused into the Cu structure, providing better adhesivity and rigidity for the bonding. Additionally, no oxidation phases were detected at the interface. The best bonding quality was obtained when heated up to 430 degrees C with an applied pressure of 40 MPa during bonding process.
- Dergi
- JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
- Yıl
- 2021
- Cilt
- 32
- Sayı
- 11
- Sayfa
- 15605-15614
- ISSN
- 0957-4522
- eISSN
- 1573-482X
- DOI
- 10.1007/s10854-021-06109-9
- WoS UID
- WOS:000650829800001