Effect of voltages on γ<i>-Ray</i> linear attenuation coefficients for some semiconductors
In this work, the change according to the different voltages (0, 5, 10, 15, 20 and, 25 V) of gamma-ray linear attenuation coefficients for GaSe, GaSe:Cd, GaSe:Sn, GaTe, GaTe:Cd, Ga0.9In0.1Se, GaTe0.4Se0.6, and GaTe0.8Se0.2 semiconductors have been measured by using an extremely narrow collimated-beam transmission method in the energy 59.54 keV. Gamma-rays of Am-241 were detected by using a high-resolution Si(Li) detector and, energy dispersive X-ray fluorescence spectrometer (EDXRFS). GaSe, GaSe:Cd, GaSe:Sn, GaTe, GaTe:Cd, Ga0.9In0.1Se, GaTe0.4Se0.6, and GaTeo(0.8)Se(0.2) semiconductors were grown by the Bridgman-Stockbarger method. There are no cracks or voids on the surface of ingots. Samples were cleaved along the cleavage planes (001). The freshly cleaved crystals have mirror-like surfaces even before using mechanical treatment. Results are presented and discussed in this study.
- Dergi
- RADIATION PHYSICS AND CHEMISTRY
- Yıl
- 2021
- Cilt
- 179
- ISSN
- 0969-806X
- eISSN
- 1879-0895
- DOI
- 10.1016/j.radphyschem.2020.109208
- WoS UID
- WOS:000599837200003